複合物半導體元件與製程
Intro. to Compound Semiconductor Device & Process
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6 14:20–15:10 | 複合物半導體元件與製程 EF207（光復） 2 節連堂 | |
7 15:30–16:20 | ||
8 16:30–17:20 | 複合物半導體元件與製程 EF207（光復） |
* 根據陽明交大上課時間表所列
Introduction To Compound Semiconductor Device and Process, including 1. Introduction of III-V Material Characteristics: GaAs material 2. Modulation Doping & Quantum Well: Bandgap engineering 3. GaAs Material Growth Technology 4. Introduction of Epitaxial Growth Technology: LPE, HVPE, MOCVD, MBE 5. MOCVD Technology 6. Introduction of Compound Semiconductor Devices: :including FET, MESFET, HEMT and HBT 7. Heterojunction bipolar transistors (HBTs) 8. Introduction of InP Technology 9. GaN Based HEMT: Materials and Devices 10. Device Fabrication Technology: Including: Ion implantation, Lithography, Wet and Dry etch, Passivation, Isolation, PECVD, Metallization, Plating, Process control monitoring technology
Not specified
無備註
T.A. Chee How, Lu
Class participation & Homework (20%), Midterm exam (40%), Final exam (40%)
教師未提供此項資料
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“Modern GaAs processing Methods”, Ralph E. Williams, 1990 “SiGe, GaAs and InP Hetrojunction Bipolar Transistos”, Jiam S.Yuan,1990
- 地點
- MIRC Building, GuangFu campus
- 時間
- 教師未提供此項資料
- 聯絡方式
- Contact of the TA to arrange meeting with the Professor