半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 半導體物理及元件(一) EE132（光復） 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Semiconductor technologies are essential to enable high-performance electronic products. Recently, the demands of the new applications, such as 5G, AI, cloud computing, and Electric vehicles, have triggered the innovations of the semiconductor technologies. The core knowledge of the semiconductor physics and devices, therefore has become essential for researchers and engineers. In this class, the properties for the semiconductor materials, the physics of energy band formation, carrier statistics and transport, and the operation principals for the most important devices architectures such as Diode, Metal-semiconductor contacts, and MOSFETs will be introduced and discussed in details. Furthermore, the recent progress and challenges in developing beyond Moore's law technologies will be reviewed. Intended Learning Outcomes (ILOs): By the end of this class, you should be able to: 1. Explain the basic materiel properties and device physics. 2. Apply the device physics to evaluate the operation principles of pn diodes, contacts, MOSFETs, etc. 3. Evaluate the current issues in the scaling technologies (More Moore technologies), eg, short channel effects, ultra-thin dielectric, subthreshold swing (SS), etc. -Identify the problems 4. Propose the designs to overcome the challenges in the scaling semiconductor technologies. -Innovation is about the problem-solving
Basic physics fundamentals
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Midterm exam: 30% Final exam: 40% Homework 20%, Class participation: 10%
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Course introduction |
| 第 2 週 | Fundamentals of quantum mechanics |
| 第 3 週 | Crystal structure and band theory of solids |
| 第 4 週 | Crystal structure and band theory of solids |
| 第 5 週 | Equilibrium carrier statistics |
| 第 6 週 | Non-equilibrium recombination-generation process |
| 第 7 週 | Carrier transport |
| 第 8 週 | Midterm exam/Carrier transport |
| 第 9 週 | P-N junction diode |
| 第 10 週 | P-N junction diode |
| 第 11 週 | Metal-Semiconductor contact |
| 第 12 週 | Metal-Semiconductor contact |
| 第 13 週 | MOS Capacitor and MOSFET |
| 第 14 週 | MOSFET fundamentals and modeling; Real device effects in MOSFETs |
| 第 15 週 | Real device effects in MOSFETs; Advanced MOSFET technologies |
| 第 16 週 | Final exam |
1. Semiconductor Device Fundamentals, R. F. Pierret (1996). 2. R. S. Muller and Y. I. Kamins, Device Electronics for Integrated Circuits, 3rd Edition (2002). 3. D. Neamen, Semiconductor Physics and Devices, 4th edition (2012). 4. S.M.Sze, Physics of Semiconductor Devices, 4th Edition, 2021.
- 地點
- EF471
- 時間
- Monday 3-4 pm or by appointment
- 聯絡方式
- Email me at girish@nycu.edu.tw