半導體元件物理與奈米電晶體
Semiconductor Device Physics and Nanometer Scale Transistors
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體元件物理與奈米電晶體 CS100（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
This course covers the physics and practical engineering aspects of solid-state electronic devices, including p-n junctions, MOS devices, field-effect transistors, bipolar transistors, etc. Principles of CMOS and bipolar scaling to nanometer dimensions and their high frequency performance factors in digital and analog circuits will be taught.
Graduate students and senior undergraduate students can take the course
無備註
實體與線上同步教學, plus optional office hours with instructors and/or TA.
Homework sets will be given without handing in or grading, and solutions will be offered to enhance learning. 考試方式..All tests are open book, open notes, calculator allowed. 考評項目其所佔總分比率.. Midterm 1: 25% of total score. Midterm 2: 25% of total score. Final: 50% of total score.
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Basic Device Physics (Chapter 2..) |
| 第 2 週 | p-n Junctions and Metal-Silicon Contacts (Chapter 3..) |
| 第 3 週 | MOS Capacitors (Chapter 4) |
| 第 4 週 | MOS Capacitors (traps, interface, etc.) & MOSFET: Long Channel (Chapter 5..) |
| 第 5 週 | MOSFETs: Long Channel (Chapter 5..); Midterm 1 |
| 第 6 週 | MOSFETs: Short Channel (Chapter 6..) |
| 第 7 週 | MOSFETs Scaling |
| 第 8 週 | SOI, multi-gate, 3D FinFET, Stacked GAA NS/NW, and emerging MOSFETs (Chapter 7...) |
| 第 9 週 | CMOS Performance Factors (Chapter 8) |
| 第 10 週 | CMOS Performance Factors (nano/sub-nanometer nodes); Midterm 2 |
| 第 11 週 | Bipolar Devices (Chapter 9) |
| 第 12 週 | Bipolar Device Design and Performance Factors (Chapter 10, 11..) |
| 第 13 週 | Bipolar Performance Factors and HBT |
| 第 14 週 | Memory Devices (Chapter 12) |
| 第 15 週 | Compound Hetero-Junction Devices (Overview) |
| 第 16 週 | Final exam |
1.教科書:"Fundamentals of Modern VLSI Devices, 3rd ed." by Yuan Taur and Tak Ning, Cambridge University Press, 2022. 2.講義:Power-Point slides and WORD files of the book and supplemental materials will be made available.
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