半導體實驗
Semiconductor Lab.
| 節 | 週一 |
|---|---|
5 13:20–14:10 | 半導體實驗 EE210（光復） 4 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
This course provides students with hands-on experience in fabrication and characterization of semiconductor devices, where they will actively participate in the MOS capacitor and P-N junction fabrication process. The curriculum includes both theoretical lectures and practical experiments at TSRI to deepen understanding of the fundamental physics of semiconductor devices and processes. Key topics include cleaning, oxidation, deposition, lithography, etching, doping, annealing, and device characterization. Students will also engage in site visits to TSMC Newcomer Training Center (NTC) in Taichung. The course culminates in a written exam and final presentation, where students showcase their understanding and results from the practical exercises conducted throughout the semester.
No prerequisites
無備註
教師未提供此項資料
實驗課和參訪出席 50% (一次未出席-25%) 期中考 20% 期末作業 15% 期末報告 15%
教師未提供此項資料
| 週次 | 主題 |
|---|---|
| 第 1 週 | -Introduction of this course -Flow of MOS capacitor and P-N junction -History of TSRI & NFC |
| 第 2 週 | -Safety issues -Clean room environment -Clean process |
| 第 3 週 | -Oxidation process -Deposition process |
| 第 4 週 | @TSRI -Wet clean -CVD -PVD -ALD |
| 第 5 週 | -Lithography process -Etch process -CMP process |
| 第 6 週 | @TSRI -Lithography |
| 第 7 週 | @TSRI -dry etching -ALE -CMP |
| 第 8 週 | -Diffusion process -TSMC NTC introduction |
| 第 9 週 | @TSRI -Impanter -Diffusion -Laser -RTA |
| 第 10 週 | -Written exam (only one) |
| 第 11 週 | 4/26 (Sat.) @TSMC NTC (Taichung) -Visiting1 |
| 第 12 週 | 5/3 (Sat.) @TSMC NTC (Taichung) -Visiting2 |
| 第 13 週 | -MOS capacitor and P-N junction measurements -Introduction of final report/presentation |
| 第 14 週 | @TSRI -I-V & C-V measurement |
| 第 15 週 | (No class) -Preparation of final report/presentation |
| 第 16 週 | -Final report presentation |
Handouts, Reference list: Hong Xiao, “Introduction to Semiconductor Manufacturing Technology”, 2000, Prentice Hall. J. D. Plummer, M. D. Deal, and P. B. Griffin, “Silicon VLSI Technology-Fundamentals, Practice and Modeling”, 2000, Prentice Hall. S. M. Sze, “Semiconductor Devices Physics and Technology”, 2nd Ed., 2002, J. Wiley & Sons Inc.
- 地點
- 教師未提供此項資料
- 時間
- 教師未提供此項資料
- 聯絡方式
- 教師未提供此項資料