尖端材料之基礎與應用
Advanced Materials: Fundamentals and Applications
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 尖端材料之基礎與應用 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
NTU CCMS Room212 Monday 9:10~12:10 In this course, students will learn the fundamental properties, synthesis methods and applications of various advanced materials, ranging from semiconductors, to quantum matters and low-dimensional nano-materials. Start from Si technology, you will learn the thermodynamics and kinetics of bulk and thin film growth processes. Especially, the principles and development of the specific process and factors that control the material quality will be taught. In addition, some important issues like contact problem, doping and dielectric layer would be discussed. Besides Si, the second and third generation semiconductors, such as GaAs and GaN, would be introduced. Breakthroughs in synthesis of these materials have enabled or enhanced their unique properties, which can change our daily life. After introducing the semiconductor properties and applications, we will take a step forward to a variety of materials, including ferroelectrics, oxide-based superconductor, spintronics materials, followed by energy materials such as thermoelectrics, perovskites, polymers and MOF. Low-dimensional materials from 2D, 1D to 0D will be taught in the end of the course. This multidisciplinary course will provide the knowledge of the physics and materials science of different advanced materials. Moreover, the course provides a comprehensive overview of a variety of growth methods, ranging from solution-based process, solid state synthesis, ball milling, to vapor phase deposition techniques such as sputtering, CVD, MOCVD, MBE and pulsed laser ablation. The ultimate course objective is to enhance the critical and innovative thinking of students by in depth understanding the relationship between the growth/morphology/structure of the materials and the fundamental properties, which holds the key for realizing practical applications of these advanced materials and devices.
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Si, bulk and thin film growth, semiconductor fundamentals, doping, contact, dielectric, devices, beyond Moore's law (LC Chen) The course is held in Room212, 2F, CCMS(physics department building) |
| 第 2 週 | Si, bulk and thin film growth, semiconductor fundamentals, doping, contact, dielectric, devices, beyond Moore's law (LC Chen) |
| 第 3 週 | GaAs, MBE growth, direct band gap, LEDs, laser diodes, photovoltaic, etc.(LC Chen) |
| 第 4 週 | GaN, MOCVD growth, alloying, blue LED, lighting and HEMT (KH Chen) |
| 第 5 週 | Bulk crystals, solid state synthesis (& high pressure), X-ray diffraction, ferroelectrics (WT Chen) |
| 第 6 週 | Spintronics & quantum matters (I), sputtering principles & various industrial applications (DR Qu) |
| 第 7 週 | Spintronics & quantum matters (II) (DR Qu) //SiC, AlN, high power devices (LC Chen) |
| 第 8 週 | Battery materials (BJ Hwang) Essay due in this week |
| 第 9 週 | Midterm (Oral presentation) |
| 第 10 週 | Thermoelectrics, ball milling (KH Chen) |
| 第 11 週 | Solar cells, polymers and perovskites, molecular designs, solution-based processes (WF Su) |
| 第 12 週 | Metal-Organic Frameworks, adsorption, diffusion, membrane gas separation, CO2 capture (DY Kang) |
| 第 13 週 | 0D & 1D materials for various applications; 2D materials for catalysis (LC Chen) |
| 第 14 週 | 2D materials (I): various growth techniques (from solution-based to wafer- based), various characterizations tools (YP Hsieh) |
| 第 15 週 | 2D materials (II): electronic and optoelectronic applications (YP Hsieh) |
| 第 16 週 | Final Exam (Written Test) |
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