半導體元件物理與奈米電晶體
Semiconductor Device Physics and Nanometer Scale Transistors
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體元件物理與奈米電晶體 CS100（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
This course covers the physics and practical engineering aspects of solid-state electronic devices, including p-n junctions, MOS devices, field-effect transistors, bipolar transistors, etc. Principles of CMOS and bipolar scaling to nanometer dimensions and their high frequency performance factors in digital and analog circuits will be taught.
Graduate students and senior undergraduate students can take the course
無備註
實體與線上同步教學, plus optional office hours with instructors and/or TA.
Homework sets will be given without handing in or grading, and solutions will be offered to enhance learning. 考試方式..All tests are open book, open notes, calculator allowed. 考評項目其所佔總分比率.. Midterm 1: 25% of total score. Midterm 2: 25% of total score. Final: 50% of total score.
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Course contents Chapter 2 Basic Device Physics |
| 第 2 週 | Chapter 2 Basic Device Physics Chapter 3: PN Junctions and Metal-Silicon Contacts |
| 第 3 週 | Chapter 3: PN Junctions and Metal-Silicon Contacts Chapter 4: MOS Capacitors |
| 第 4 週 | Chapter 4: MOS Capacitors Chapter 5 MOSFETs, Long Channel |
| 第 5 週 | 教師節補假 |
| 第 6 週 | 中秋節放假 |
| 第 7 週 | Fabrication Processes Mid-term 1 |
| 第 8 週 | Chapter 6: MOSFETs Short Channel High Mobility Channels, Cryo-CMOS |
| 第 9 週 | Chapter 7: SOI and Double-Gate MOSFETs Scaling: Device/Structure & Low-dimensional channels |
| 第 10 週 | Chapter 8: CMOS Performance Factors |
| 第 11 週 | Chapter 8: CMOS Performance Factors Midterm 2 Chapter 9: Bipolar Devices |
| 第 12 週 | Chapter 9: Bipolar Devices SiGe HBT |
| 第 13 週 | Wide-bandgap HF and Power Devices (intro) Emerging Memory Devices (intro) |
| 第 14 週 | Chapter 12: Memory Devices |
| 第 15 週 | Chapter 12: Memory Devices Optoelectronic Devices |
| 第 16 週 | Final exam |
1.教科書:"Fundamentals of Modern VLSI Devices, 3rd ed." by Yuan Taur and Tak Ning, Cambridge University Press, 2022. 2.講義:Power-Point slides and WORD files of the book and supplemental materials will be made available.
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