半導體物理與元件
Semiconductor Physics and Device
| 節 | 週三 |
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2 09:00–09:50 | 半導體物理與元件 SC110（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Semiconductor Physics and Devices Text book by Donald Neamen Chapter 1 The basic concept of solid and energy band 1.1 Energy band diagram 1.2 Valence electrons and free electrons 1.3 The concept of holes 1.4 The donor and acceptor impurities 1.5 The drift current 1.6 The diffusion current Chapter 2 The pn junction diode 2.1 The electron-hole recombination 2.2 Build-in electric field 2.3 Depletion width derivation 2.4 Potential barrier 2.5 The energy band of the pn junction 2.6 The equilibrium boundary condition 2.7 The forward-bias recombination current 2.8 The depletion capacitance Chapter 3 Bipolar junction transistor 3.1 The energy band of the bipolar junction transistor 3.2 The operation modes 3.3 The current-voltage derivation 3.4 The input and output characteristics 3.5 The basic operation of the bipolar junction transistor 3.6 The Early effect 3.7 The frequency limitations Chapter 4 Metal-oxide-semiconductor field-effect transistor 4.1 The threshold voltage 4.2 The capacitance of the MOS structure 4.3 The pinch-off effect 4.4 The current-voltage derivation 4.5 The triode region 4.6 The saturation region 4.7 The channel-length modulation 4.8 The frequency limitations
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Mid term exam 50% and final exam 50 %
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Semiconductor Physics and Devices Text book by Donald Neamen
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